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| BAS85 SCHOTTKY BARRIER DIODE Ultra High-Speed Switching, Voltage Clamping Protection Circuits and Blocking Applications Features * Low forward voltage. * Guard ring protected. * Hermetically-sealed leaded glass package. Absolute Maximum Ratings (Ta = 25oC) Parameter Continuous reverse voltage Continuous forward current Average forward current Repetitive peak forward current Non-repetitive peak forward current Operating ambient temperature Junction temperature Storage temperature range Thermal resistance from junction to ambient Symbol VR IF IF(AV) IFRM IFSM Tamb Tj TS Rthja Limits 30 200 200 300 5 -65 to +125 125 -65 to +150 320 Unit V mA mA mA A O O O C C C K/W Characteristics at Ta = 25oC Parameter Forward voltage at IF = 0.1mA at IF = 1mA at IF = 10mA at IF = 30mA at IF = 100mA Reverse current at VR = 25V Reverse recovery time at IF = 10mA, IR = 10mA, RL = 100 Symbol VF VF VF VF VF IR trr Min. Typ. Max. 240 320 400 500 800 2.3 4 Unit mV mV mV mV mV A ns SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 02/08/2005 BAS85 SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) (R) Dated : 02/08/2005 |
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